MSC1175MA Details_MSC1175MA PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)	-
Gain	8dB
Power - Max	400W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 1A, 5V
Current - Collector (Ic) (Max)	12A
Operating Temperature	250°C
Mounting Type	Chassis Mount
Package / Case	M218
Supplier Device Package	M218

Other

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