1517-20M Details_1517-20M PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.48GHz ~ 1.65GHz
Noise Figure (dB Typ @ f)	-
Gain	7.6dB ~ 9.3dB
Power - Max	175W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA, 5V
Current - Collector (Ic) (Max)	3A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	55LV-1
Supplier Device Package	55LV-1

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