BFG410W,115 Details_BFG410W,115 PDF Document_NXP USA Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.5V
Frequency - Transition	22GHz
Noise Figure (dB Typ @ f)	0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Gain	21dB
Power - Max	54mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 2V
Current - Collector (Ic) (Max)	12mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	CMPAK-4

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