BF776H6327 Details_BF776H6327 PDF Document_Infineon Technologies-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	46GHz
Noise Figure (dB Typ @ f)	0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain	24dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 30mA, 3V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4

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