MMBTH10RG Details_MMBTH10RG PDF Document_Fairchild Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Frequency - Transition	450MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	225mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 1mA, 6V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

Other

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