PH2729-130M Details_PH2729-130M PDF Document_MACOM Technology Solutions-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	63V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	9.73dB ~ 8.85dB
Power - Max	130W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Current - Collector (Ic) (Max)	12.5A
Operating Temperature	200°C (TJ)
Mounting Type	Chassis Mount
Package / Case	-
Supplier Device Package	-

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