JAN2N4957 Details_JAN2N4957 PDF Document_Microsemi Corporation-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	3.5dB @ 450MHz
Gain	25dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-72-3 Metal Can
Supplier Device Package	TO-72

Other

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