2N5583 Details_2N5583 PDF Document_Solid State Inc.-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Box
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Frequency - Transition	1.3GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 100mA, 2V
Current - Collector (Ic) (Max)	500mA
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Supplier Device Package	TO-39

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