MRF321 Details_MRF321 PDF Document_MACOM Technology Solutions-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	33V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	13dB
Power - Max	10W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 500mA, 5V
Current - Collector (Ic) (Max)	1.1A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	244-04
Supplier Device Package	244-04, STYLE 1

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