4MN10CH-TL-E Details_4MN10CH-TL-E PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	200V
Frequency - Transition	400MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	600mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 10mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	SC-96
Supplier Device Package	3-CPH

Other

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