BDX53C Details_BDX53C PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Current - Collector Cutoff (Max)	500µA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V
Power - Max	60 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

Other

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