TIP151 Details_TIP151 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	350 V
Vce Saturation (Max) @ Ib, Ic	2V @ 250mA, 5A
Current - Collector Cutoff (Max)	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 2.5A, 5V
Power - Max	80 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package	TO-220FN

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