2N2432A Details_2N2432A PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	30 V
Vce Saturation (Max) @ Ib, Ic	-
Current - Collector Cutoff (Max)	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1mA, 5V
Power - Max	300 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18 (TO-206AA)

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