2SC4617T1G Details_2SC4617T1G PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	400mV @ 5mA, 60mA
Current - Collector Cutoff (Max)	500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V
Power - Max	125 mW
Frequency - Transition	180MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SC-75, SOT-416

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