CP147-MJ11016-WN Details_CP147-MJ11016-WN PDF Document_Central Semiconductor Corp-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	30 A
Voltage - Collector Emitter Breakdown (Max)	120 V
Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A
Current - Collector Cutoff (Max)	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Power - Max	200 W
Frequency - Transition	4MHz
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

Other

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