MJ10001 Details_MJ10001 PDF Document_NTE Electronics, Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	SWITCHMODE™
Package	Bag
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	20 A
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	3V @ 1A, 20A
Current - Collector Cutoff (Max)	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 5A, 5V
Power - Max	175 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-204AA, TO-3
Supplier Device Package	TO-3

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