PHE13007,127 Details_PHE13007,127 PDF Document_WeEn Semiconductors-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	350mV @ 1A, 5A
Current - Collector Cutoff (Max)	200µA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 2A, 5V
Power - Max	80 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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