2N7053_D75Z Details_2N7053_D75Z PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	1.5 A
Voltage - Collector Emitter Breakdown (Max)	100 V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)	200nA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 5V
Power - Max	1 W
Frequency - Transition	200MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-226-3

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