JAN2N6300 Details_JAN2N6300 PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/539
Package	Bulk
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	60 V
Vce Saturation (Max) @ Ib, Ic	3V @ 80mA, 8A
Current - Collector Cutoff (Max)	500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 4A, 3V
Power - Max	75 W
Frequency - Transition	-
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-213AA, TO-66-2
Supplier Device Package	TO-66 (TO-213AA)

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