JAN2N4261UB Details_JAN2N4261UB PDF Document_Microchip Technology-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/511
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	30 mA
Voltage - Collector Emitter Breakdown (Max)	15 V
Vce Saturation (Max) @ Ib, Ic	350mV @ 1mA, 10mA
Current - Collector Cutoff (Max)	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 1V
Power - Max	200 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-SMD, No Lead
Supplier Device Package	UB

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