BSP19AT1 Details_BSP19AT1 PDF Document_ON Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	350 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Power - Max	800 mW
Frequency - Transition	70MHz
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223 (TO-261)

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