2SD1857ATV2Q Details_2SD1857ATV2Q PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Transistor Type	NPN
Current - Collector (Ic) (Max)	1.5 A
Voltage - Collector Emitter Breakdown (Max)	160 V
Vce Saturation (Max) @ Ib, Ic	2V @ 100mA, 1A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 100mA, 5V
Power - Max	1 W
Frequency - Transition	80MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	ATV

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