BU508AF Details_BU508AF PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	8 A
Voltage - Collector Emitter Breakdown (Max)	700 V
Vce Saturation (Max) @ Ib, Ic	1V @ 1.6A, 4.5A
Current - Collector Cutoff (Max)	200µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 100mA, 5V
Power - Max	50 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOWATT218FX
Supplier Device Package	ISOWATT-218FX

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