BDV65C-S Details_BDV65C-S PDF Document_Bourns Inc.-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	12 A
Voltage - Collector Emitter Breakdown (Max)	120 V
Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Current - Collector Cutoff (Max)	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V
Power - Max	3.5 W
Frequency - Transition	-
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-218-3
Supplier Device Package	SOT-93

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