2SA1615-Z-E1-AZ Details_2SA1615-Z-E1-AZ PDF Document_Renesas Electronics America Inc-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 50mA, 4A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V
Power - Max	1 W
Frequency - Transition	180MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252 (MP-3Z)

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