2SA1943N(S1,E,S) Details_2SA1943N(S1,E,S) PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	PNP
Current - Collector (Ic) (Max)	15 A
Voltage - Collector Emitter Breakdown (Max)	230 V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Current - Collector Cutoff (Max)	5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Power - Max	150 W
Frequency - Transition	30MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)

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