BU931T Details_BU931T PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tube
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	10 A
Voltage - Collector Emitter Breakdown (Max)	400 V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 250mA, 10A
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 5A, 10V
Power - Max	125 W
Frequency - Transition	-
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB

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