US6X3TR Details_US6X3TR PDF Document_Rohm Semiconductor-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (Max)	3 A
Voltage - Collector Emitter Breakdown (Max)	12 V
Vce Saturation (Max) @ Ib, Ic	250mV @ 30mA, 1.5A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	270 @ 500mA, 2V
Power - Max	400 mW
Frequency - Transition	360MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-SMD, Flat Leads
Supplier Device Package	TUMT6

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