BULT106D Details_BULT106D PDF Document_STMicroelectronics-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tube
Transistor Type	NPN
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	230 V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 400mA, 2A
Current - Collector Cutoff (Max)	250µA
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Power - Max	32 W
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Supplier Device Package	SOT-32-3

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