TB100EP Details_TB100EP PDF Document_WeEn Semiconductors-Galaxy Core City

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Transistor Type	NPN
Current - Collector (Ic) (Max)	1 A
Voltage - Collector Emitter Breakdown (Max)	700 V
Vce Saturation (Max) @ Ib, Ic	1V @ 150mA, 750mA
Current - Collector Cutoff (Max)	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 100mA, 5V
Power - Max	2 W
Frequency - Transition	-
Operating Temperature	150°C
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

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