ALD212914PAL Details_ALD212914PAL PDF Document_Advanced Linear Devices Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	EPAD®, Zero Threshold™
Package	Tube
FET Type	2 N-Channel (Dual) Matched Pair
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	10.6V
Current - Continuous Drain (Id) @ 25°C	80mA
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	20mV @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	500mW
Operating Temperature	-
Mounting Type	Through Hole
Package / Case	8-DIP (0.300", 7.62mm)
Supplier Device Package	8-PDIP

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