APTC60DDAM45CT1G Details_APTC60DDAM45CT1G PDF Document_Microsemi Corporation-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	CoolMOS™
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	49A
Rds On (Max) @ Id, Vgs	45mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id	3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7200pF @ 25V
Power - Max	250W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SP1
Supplier Device Package	SP1

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