QH8JB5TCR Details_QH8JB5TCR PDF Document_Rohm Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Rds On (Max) @ Id, Vgs	41mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	920pF @ 20V
Power - Max	1.1W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	TSMT8

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