IRLHS6376TR2PBF Details_IRLHS6376TR2PBF PDF Document_Infineon Technologies-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.6A
Rds On (Max) @ Id, Vgs	63mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	2.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 25V
Power - Max	1.5W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Supplier Device Package	6-PQFN (2x2)

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