SI7501DN-T1-E3 Details_SI7501DN-T1-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel, Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.4A, 4.5A
Rds On (Max) @ Id, Vgs	35mOhm @ 7.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.6W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8 Dual
Supplier Device Package	PowerPAK® 1212-8 Dual

Other

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