UPA2351T1P-E4-A Details_UPA2351T1P-E4-A PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.7A (Ta)
Rds On (Max) @ Id, Vgs	40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7.1nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	523pF @ 10V
Power - Max	1.3W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	4-XFLGA
Supplier Device Package	4-EFLIP-LGA (1.62x1.62)

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