CSD87384MT Details_CSD87384MT PDF Document_Texas Instruments-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	NexFET™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	30A
Rds On (Max) @ Id, Vgs	7.7mOhm @ 25A, 8V
Vgs(th) (Max) @ Id	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 15V
Power - Max	8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	5-LGA
Supplier Device Package	5-PTAB (5x3.5)

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