ZXMC4A16DN8TA Details_ZXMC4A16DN8TA PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel Complementary
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	5.2A (Ta), 4.7A (Ta)
Rds On (Max) @ Id, Vgs	50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	1V @ 250mA (Min)
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	770pF @ 40V, 1000pF @ 20V
Power - Max	2.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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