FDMQ86530L Details_FDMQ86530L PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	GreenBridge™ PowerTrench®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	4 N-Channel (H-Bridge)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	8A
Rds On (Max) @ Id, Vgs	17.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2295pF @ 30V
Power - Max	1.9W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	12-WDFN Exposed Pad
Supplier Device Package	12-MLP (5x4.5)

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