MSCMC90AM12C3AG Details_MSCMC90AM12C3AG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	-
FET Feature	-
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	-
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	SP3F

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