DMG8822UTS-13 Details_DMG8822UTS-13 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)Cut Tape (CT)
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.9A (Ta)
Rds On (Max) @ Id, Vgs	25mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	841pF @ 10V
Power - Max	870mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP

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