UPA2792AGR-E1-AT Details_UPA2792AGR-E1-AT PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A
Rds On (Max) @ Id, Vgs	12.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2200pF @ 10V
Power - Max	2W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerSOIC (0.173", 4.40mm Width)
Supplier Device Package	8-SOP

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