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SI4200DY-T1-GE3 Picture

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SI4200DY-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET 2N-CH 25V 8A 8SOIC
  • Datasheet download
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In Stock:18,352(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
25V
Current - Continuous Drain (Id) @ 25°C
8A
Rds On (Max) @ Id, Vgs
25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
415pF @ 13V
Power - Max
2.8W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Other
Price advantage, SI4200DY-T1-GE3 is available in stock and can be delivered on the same day
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