RJM0603JSC-00#13 Details_RJM0603JSC-00#13 PDF Document_Renesas Electronics America Inc-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	-
FET Type	3 N and 3 P-Channel (3-Phase Bridge)
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	20A
Rds On (Max) @ Id, Vgs	20mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 10V
Power - Max	54W
Operating Temperature	175°C
Mounting Type	Surface Mount
Package / Case	20-SOIC (0.433", 11.00mm Width) Exposed Pad
Supplier Device Package	20-HSOP

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