ALD1110ESAL Details_ALD1110ESAL PDF Document_Advanced Linear Devices Inc.-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	EPAD®
Package	Tube
FET Type	2 N-Channel (Dual) Matched Pair
FET Feature	Standard
Drain to Source Voltage (Vdss)	10V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	500Ohm @ 5V
Vgs(th) (Max) @ Id	1.01V @ 1µA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	2.5pF @ 5V
Power - Max	600mW
Operating Temperature	0°C ~ 70°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

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