TPCF8304(TE85L,F,M Details_TPCF8304(TE85L,F,M PDF Document_Toshiba Semiconductor and Storage-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.2A
Rds On (Max) @ Id, Vgs	72mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 10V
Power - Max	330mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SMD, Flat Lead
Supplier Device Package	VS-8 (2.9x1.5)

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