APTMC120AM08CD3AG Details_APTMC120AM08CD3AG PDF Document_Microchip Technology-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	250A (Tc)
Rds On (Max) @ Id, Vgs	10mOhm @ 200A, 20V
Vgs(th) (Max) @ Id	2.2V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	490nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	9500pF @ 1000V
Power - Max	1100W
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	D-3 Module
Supplier Device Package	D3

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