FDG6332C-F085P Details_FDG6332C-F085P PDF Document_ON Semiconductor-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	700mA (Ta), 600mA (Ta)
Rds On (Max) @ Id, Vgs	300mOhm @ 700mA, 4.5V, 420mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V, 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	113pF @ 10V, 114pF @ 10V
Power - Max	300mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-88/SC70-6/SOT-363

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