DMN2016LHAB-7 Details_DMN2016LHAB-7 PDF Document_Diodes Incorporated-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual) Common Drain
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.5A
Rds On (Max) @ Id, Vgs	15.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1550pF @ 10V
Power - Max	1.2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	U-DFN2030-6

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