SI3909DV-T1-E3 Details_SI3909DV-T1-E3 PDF Document_Vishay Siliconix-Galaxy Core City

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	200mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id	500mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.15W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

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